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9. AR-N 4400 negative photo resist

ㆍ	Negative photo resist
ㆍ	Easy removing, SU-8 대응 제품
ㆍ	Thickness: 3 μm - 100 μm
ㆍ	Lift-off
ㆍ	30ml, 100ml, 250ml, 500ml, 1L 용량 선택 가능

AR-N 4400 negative photo resist

Characterisation

Properties

- i-, g-line, e-beam, X-ray, synchrotron, broadband UV
- Chemically enhanced, very good adhesion, electro plating-
stable
- Very high sensitivity, easy removal
- Profiles with high edge steepness for excellent resolution,
covering of topologies
- 4400-05/ -10 for films up to 10μm/ 20 μm (250 rpm)
- 4450-10 for film thickness up to 20 μm and lift-off
- 4400-25 for very thick films up to 50 μm (250 rpm)
- 4400-50 for highest film thickness up to 100 μm

Parameter / AR-N	4400 -05	4400 -10	4450 -10	4400 -25	4400 -50
Thickness (μm) / 1000 rpm	5	10	10	25	50
Resolution (μm)	1.0	2.0	3.5	3.5	5.0

Plasma etching rates (nm/min) (5 Pa, 240~250 V Bias)	Ar-sputtering	3
	CF4	31
	80 CF4 + 16 O2	81

Spin Curve

Process chemicals

Adhesion promotor	AR 300-80
Developer	AR 300-44, 300-46, 300-47
Thinner	AR 300-12
Remover	AR 600-70, AR 600-70

Process results

Comparison AR-N 4400 and SU-8

AR-N 4400	Resist properties - Suitability	SU-8
✓	Thick films	✓✓
✓	Excellent aspect ratio	✓
✓	High sensitivity at i-line, deep UV, e-beam, X-ray	✓✓
✓	Good sensitivity at g-line	X
✓	Low-stress tempering – easy handling	X
✓	Aqueous-alkaline development	X
✓	Easy removal	X

Comparison AR-M 4400 vs. SU-8 removing after Au-plating

AR-N 4400 Resist thickness 30 µm / Au thickness 24 µm Remover NMP room temperatue 5 minutes	SU-8 Resist thickness 20 μm / Au thickness 12.6 μm Remover NMP 60 °C long, ultra sonic