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Negative photo resist

2. HARE-SQ High Aspect Ratio Epoxy Photoresist
ㆍ  High aspect ratio epoxy negative photo resist
ㆍ  SU-8 공정과 호환
Thickness: 2 μm - 100 μm
ㆍ  Application: MEMS, Microfluidics, Sensors, Pixel arrays
ㆍ  저렴한 가격. 0.5 L, 1 L, 4 L 이외 용량 선택 가능
ㆍ  납기일: 3~5주 (평균 납기일: 24일, 2018년 납품 기준)
HARE-SQ High Aspect Ratio Epoxy Negative Photoresist
Description
Properties
  HARE-SQ is an epoxy based negative photoresist designed for
 polymeric MEMS, microfluidics, micromachining and  other
 microelectronic applications.

  The HARE-SQ system is designed for use in thick film applications
 of 2 to 100 microns,and is ideal for use in permanent applications
 in which the photoresist remains within the finished device.
 - The HARE-SQ photoresist uses an epoxy resin with superior
   cleanliness and excellent reproducibility.
  - Consistent surface energy of crosslinked resist, (an important
   property for microfluidic applications).
  - Fully compatible with SU-8 processes.
  - Application: MEMS, Microfluidics, Sensors, Pixel arrays.

Film thickness vs. Spin speed
Percent transmittance vs. Wavelength
TF_612x444px.jpg
Transmittance_612x444px.jpg

Process Guide
Product:
Film thickness @ 2000 rpm
SQ-2
2 μm
SQ-5
5 μm
SQ-10
10 μm
SQ-25
25 μm
SQ-50
50 μm
SQ-50
100 μm
Softbake (2 step)65 °C for 1 min
95 °C for 1 min
65 °C for 1 min
95 °C for 3 min
65 °C for 2 min
95 °C for 5 min
65 °C for 3 min
95 °C for 7 min
65 °C for 5 min
95 °C for 15 min
65 °C for 10 min
95 °C for 30 min
Expose (broadband) on Si200 mJ/cm2180 mJ/cm2180 mJ/cm2180 mJ/cm2180 mJ/cm2180 mJ/cm2
Post Exposure Bake (2 step)65 °C for 1 min
95 °C for 1 min
65 °C for 1 min
95 °C for 1 min
65 °C for 1 min
95 °C for 2 min
65 °C for 1 min
95 °C for 3 min
65 °C for 1 min
95 °C for 4 min
65 °C for 2 min
95 °C for 10 min
Develop (immersion)1 min1 min2.5 min3.5 min6 min15 min

Process results
HARE_SQ_logo_ports_in_50um_film.jpg
Logo & posts in 50 μm film
HARE_SQ_5um_line_space_in_25um_film.jpg
5 μm dense line/space in 25 μm film
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