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Positive ebeam resist

5. DisCharge H2O, H2OX2, H2OX4 conductive resist
ㆍ  Conductive resist.
ㆍ  * DisCharge H2O: about 40 nm @ 1000 RPM / Resistivity about 7.30 Ωm (Av.).
ㆍ  * DisCharge H2OX2: about 80 nm @ 1000 RPM / Resistivity about 7.65 Ωm (Av.).
ㆍ  * DisCharge H2OX4: about 165 nm @ 1000 RPM / Resistivity about 9.48 Ωm (Av.).
ㆍ  높은 안정성과 긴 제품 수명 (약 2년).
ㆍ  저렴한 가격. 25 ml ~ 4 L 다양한 용량.
DisCharge H2O, H2OX2, H2OX4 conductive resist
DisCharge Advantage
DisCharge Properties
  - Efficient charge dissipation in EBL on a broad range of resist
   materials (PMMA,HSQ, mr-PosEBR, CSAR 62, ZEP, 520A, SML).
  - Improved shape fidelity and positional accuracy of EBL patterns
   in resist on insulated substrate materials such as SiO2,
   fused silica, quartz, PDMS, etc.
  - Water based formulation with excellent wetting properties.
  - Simple spin coat application.
  - Easy residue free removal by water or IPA rinse.
  - Competitively priced. Idea for both research and industrial
    applications.
  - Manufactured in USA with global distribution network.
  - 2 year shelf life at room temperature. Highly stable permanently
   charged non-polymer formulation. No filtration required prior
   to use.
       
 Product nameDisCharge H2ODisCharge H2OX2DisCharge H2OX4
 Solvent baseWaterWaterWater
 Film Thickness40 nm
(1000  PRM)
80 nm
(1000  RPM)
165 nm
(1000  RPM)
 Resistivity
 (Averaged)
7.30 Ωm7.65 Ωm9.48 Ωm
 Shelf Life
 (at RT)
2 years2 years2 years

Spin Curves
Sheet Resistance vs Thickness
Spin_curves.jpg
DC_sheet_resistance.jpg

 
Evidence of DisCharge Anti-Charging Properties
300 nm PMMA 950 A4 / 1 mm PDMS / bulk Si
Test1.jpg
Without DisCharge: charge accumulation and sudden charge dissipation caused by exceeding the dielectric breakdown strength of the PDMS to the Si substrate resulting in significant cracking of the resist.
Test1_1.jpg
WITH DisCharge: no charge accumulation, resulting in expected image with no harm to the PDMS.

300 nm SML300 on glass Slide
SML without DisCharge.jpg
Without DisCharge H2OX2: charge accumation leading to poor shape fidelity of the contrast curve pattern.   
SML with DisCharge.jpg
WITH DisCharge H2OX2: no charge accumulation is observed. The structure appears as expected.
300 nm mr-PosEBR on Glass Slide
Test2.jpg
Without DisCharge: charge accumation leading to poor shape fidelity of the contrast curve pattern.
Test2_1.jpg
WITH DisCharge: no charge accumulation is observed. The structure appears as expected. Crosslinking of the positive resist is especially observed at high doses.
200 nm ZEP520A on Glass Slide
Test3.jpg
Without DisCharge: charge accumation leading to poor shape fidelity of the contrast curve pattern.
Test3_1.jpg
WITH DisCharge: no charge accumulation is observed. The structure appears as expected. Crosslinking of the ZEP520A resist is especially observed at high doses.
300 nm CSAR 62 on Glass Slide
Test4.jpg
Without DisCharge: charge accumation leading to poor shape fidelity of the contrast curve pattern.
Test4_1.jpg
WITH DisCharge: no charge accumulation is observed. The structure appears as expected. Crosslinking of the CSAR62 resist is especially observed at high doses.
300 nm ZEP520A on Fused Silica
Test5.jpg
Without DisCharge: charge accumulation resulting in poor shape fidelity of the tower pattern.
Test5_1.jpg
WITH DisCharge: No charge accumulation is observed. The structures appear as expected.
Test6.jpg
Without DisCharge: charge accumulation resulting in poor shape fidelity of the tower pattern
Test6_1.jpg
WITH DisCharge: No charge accumulation is observed. The structures appear as expected.