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1. DisCharge H2O, H2OX2, H2OX4 conductive layer

ㆍ	Improved Scanning Electron Microscope Imaging on Non-Conductive Substrate
ㆍ	* DisCharge H2O: about 40 nm @ 1000 RPM / Resistivity about 7.30 Ωm (Av.).
ㆍ	* DisCharge H2OX2: about 80 nm @ 1000 RPM / Resistivity about 7.65 Ωm (Av.).
ㆍ	* DisCharge H2OX4: about 165 nm @ 1000 RPM / Resistivity about 9.48 Ωm (Av.).
ㆍ	높은 안정성과 긴 제품 수명 (약 2년).
ㆍ	저렴한 가격. 25 ml ~ 4 L 다양한 용량.

DisCharge H2O, H2OX2, H2OX4 conductive layer

DisCharge H2O Advantage

DisCharge H2O Properties

- Efficient charge dissipation in EBL on a broad range of resist
materials (PMMA, HSQ, H-SiQ, mr-PosEBR, CSAR 62, ZEP 520A,
SML).
- Improved shape fidelity and positional accuracy of EBL patterns
in resist on insulated substrate materials such as SiO2,
fused silica, quartz, PDMS, etc.
- Water based formulation with excellent wetting properties.
- Simple spin coat application.
- Easy residue free removal by water or IPA rinse.
- Improved Scanning Electron Microscope Imaging on
Non-Conductive Substrate.
- 2 year shelf life at room temperature. Highly stable permanently
charged non-polymer formulation. No filtration required prior
to use.

Product name	DisCharge H2O	DisCharge H2OX2	DisCharge H2OX4
Solvent base	Water	Water	Water
Film Thickness	20 - 40 nm	40 - 80 nm	85 - 165 nm
Resistivity (Averaged)	7.30 Ωm	7.65 Ωm	9.48 Ωm
Shelf Life (at RT)	2 years	2 years	2 years

Spin Curves	Sheet Resistance vs Thickness

Evidence of DisCharge H2O Anti-Charging Properties
300 nm PMMA 950 A4 / 1 mm PDMS / bulk Si
Without DisCharge: charge accumulation and sudden charge dissipation caused by exceeding the dielectric breakdown strength of the PDMS to the Si substrate resulting in significant cracking of the resist.	WITH DisCharge: no charge accumulation, resulting in expected image with no harm to the PDMS.
300 nm SML300 on glass Slide
Without DisCharge H2OX2: charge accumation leading to poor shape fidelity of the contrast curve pattern.	WITH DisCharge H2OX2: no charge accumulation is observed. The structure appears as expected.
300 nm mr-PosEBR on Glass Slide
Without DisCharge: charge accumation leading to poor shape fidelity of the contrast curve pattern.	WITH DisCharge: no charge accumulation is observed. The structure appears as expected. Crosslinking of the positive resist is especially observed at high doses.
200 nm ZEP520A on Glass Slide
Without DisCharge: charge accumation leading to poor shape fidelity of the contrast curve pattern.	WITH DisCharge: no charge accumulation is observed. The structure appears as expected. Crosslinking of the ZEP520A resist is especially observed at high doses.
300 nm CSAR 62 on Glass Slide
Without DisCharge: charge accumation leading to poor shape fidelity of the contrast curve pattern.	WITH DisCharge: no charge accumulation is observed. The structure appears as expected. Crosslinking of the CSAR62 resist is especially observed at high doses.
300 nm ZEP520A on Fused Silica
Without DisCharge: charge accumulation resulting in poor shape fidelity of the tower pattern.	WITH DisCharge: No charge accumulation is observed. The structures appear as expected.
Without DisCharge: charge accumulation resulting in poor shape fidelity of the tower pattern	WITH DisCharge: No charge accumulation is observed. The structures appear as expected.

Improved Scanning Electron Microscope Imaging on Non-Conductive Substrate
DisCharge can significantly improve SEM imaging of insulated substrates by providing a removable, non-destructive film, conductive film for enhanced resolution on contrast. DisCharge H2O X4 is recommended.

Without DisCharge H2O: Low resolution and poor contrast.	WITH DisCharge H2O: Greatly increase contrast and resolution.

Products Guide

Tone	Product (link)	Film Thickness (nm)	Feature
Adhesion Promoter	SurPass series	NA	Apply resist: Novolac, DNQ, PMMA, HSQ, PMGI, SU-8, SML, PI, ...
Negative ebeam resist	HSQ series	8 – 1,650	Dilution: 1 - 45%. Supply: Powder, Solution.
	H-SiQ series	25 – 850	Dilution: 2 - 20%. Supply: Powder, Solution.
	AR-N 7520 New series	100 – 800	Best resolution: 28 nm. e-beam, DUV, i-line.
Positive ebeam resist	HARP PMMA series	50 – 3,700	m/W: 950K, 495K. Dilution: 2 - 11 %.
	HARP-C Copolymer series	150 – 1,100	MMA/MAA Copolyer. Dilution: 6 - 12 %.
	PMMA series	40 – 7,000	m/W: 950K, 495K, 350K, 120K, 35K. Dilution: 1 - 18 %.
	Copolymer series	100 – 1,100	Copolymer. Dilution: 1 - 13 %.
	SML series	50 – 4,800	High resolution: 5 nm. Aspect ratio: >50:1. Slow etch rate.
Conductive layer	DisCharge H2O series	25 – 170	Apply resist: PMMA, HSQ, mr-PosEBR, AR-P 6200, ZEP, SML.
Protective Surface Coating	PSC-1003	2.4 – 5.3	Protective Surface Coating
Protective Surface Coating	PSC-IB DPM 1010	10 (@ 2000 RPM)	Protective Surface Coating

^* Double coating.

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