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5. SX AR-N 8400 - Negative E-beam Resist

ㆍ	High-resolution negative e-beam resist
ㆍ	Hydrogen silsesquioxane dissolved in butyl acetate
ㆍ	Thickness: 40 nm - 750 nm
ㆍ	100ml, 250ml, 1L 용량 선택 가능

SX AR-N 8400 - Negative E-beam Resist

SX AR-N 8400 Characterisation

Properties

- Hydrogen silsesquioxane dissolved in butyl acetate.
- High resolution e-beam resist.
- Improved shelf life, as butyl acetate reduces gelling and
particle formation.
- Elimination of the presumably carcinogenic solvent MIBK
(methyl isobutyl ketone).

Parameter / SX AR-N	8400.04	8400.08	8400.12	8400.22
Solids content (%)	4	8	12	22
Film thickness/4000 rpm (nm)	50	100	200	400

Plasma etching rates (nm/min) (1 Pa, -100 V Bias)	Ar	34
	SF6	146
	CF4	175
	CF4+O2	82
	O2	5.5
	Cl2	64

Spin Curve

Process chemicals

Developer	AR 300-44, AR 300-73
Thinner	Butylacetate VLSI-grade
Stopper	DI water
Remover	BOE 5:1 or 1% HF

Process results
6 nm lines developed with 1% KOH. The wafer was stored in vacuum for 10 days between coating and lithography and showed no loss of processability or degradation. © Raith Dortmund	100 nm line/space structures written on silicon at 1000 μC/cm² @ 100 kV and developed with AR 300-73 (6.5% TMAH solution). © J. Hohmann, KIT-IMT Karlsruhe